Gali Ádám honlapja

Kutató vagyok a számítógépes fizika területén. Tömbi és nanoszerkezetű félvezetőkben vizsgálom a ponthibákat közelítő és első elvű modern számítási módszerekkel. Az elmúlt évtizedben számos ponthibát jellemeztem a szilíciumban, gyémántban és szilíciumkarbidban. A most leginkább foglalkoztató terület a tömbi és nanoszerkezetű széles tiltottsávú félvezetők napelemcella, biológiai jelzőrendszer és spintronika alkalmazásai. A részleteket Gali Ádám kutatócsoportjának honlapján tekinthetik meg. A szakmai önéletrajzom és publikációs tevékenységem is nyomon követhető.

Az általam alkalmazott módszerekről tartok egy speciális előadást és gyakorlatot érdeklődő hallgatók számára két félévben "Atomi szintű számítógépes szimuláció szilárdtestekben" címmel. Az első félév anyagát jegyzetté formáltam, amely letölthető innen: jegyzet.pdf illetve jegyzet.zip. Utóbbi tartalmazza a gyakorlat állományait is, amelyeket az érdeklődő hallgatók a Tanszéken rendelkezésre álló számítógépeken és kódokkal futtathatnak.

Szakmai önéletrajz

név: Gali Ádám
született: 1973. február 28, Budapest
képzés helye: Budapesti Műszaki és Gazdaságtudományi Egyetem
tudományos fokozat:
- okleveles villamosmérnök, 1996
- fizikus PhD, 2001
- MTA doktora (fizika), 2011
- Habilitált (BME), 2011
tudományos tapasztalatok:
- TEMPUS (EU) ösztöndíj a Chemnitzi Egyetemen (Prof. Thomas Frauenheim csoportja), 1997
- Postdoc kutató a Harvard Egyetemen (Prof. Efthimios Kaxiras csoportja), 2007-2009 (megszakításokkal)
foglalkozás:
- 1999-2010 (megszakításokkal), oktató-kutató a Budapesti Műszaki és Gazdaságtudományi Egyetemen
- 2010-, csoportvezető a Wigner Fizikai Kutatóközpont Szilárdtestfizikai és Optikai Intézetében (MTA)
- 2010-, docens a Budapesti Műszaki és Gazdaságtudományi Egyetemen
munkahely:
- Wigner Fizikai Kutatóközpont, Szilárdtestfizikai és Optikai Intézet, Magyar Tudományos Akadémia
  tel.: [36]-(1)-392-2222/1913, [36]-(1)-392-2215
- Budapesti Műszaki és Gazdaságtudományi Egyetem, Atomfizika Tanszék
  tel.: [36]-(1)-463 1580, fax: [36]-(1)-463 4357
  email: agali@eik.bme.hu
kutatási terület: a gyémántban, szilíciumban és szilíciumkarbidban előforduló ponthibák illetve félvezető nanoszerkezetek vizsgálata kvantummechanikai számításokkal; félempirikus és első elvű módszerek; Hartree-Fock-Roothaan-elmélet, sűrűségfunkcionál-elmélet, módszerek a standard sűrűségfunkcionál-elméleten túl: hibridfunkcionálok, GW-módszer, TDDFT
saját vezetésű projektek:
- OTKA F38357: Besugárzással létrehozott ponthiba és ponthibaagglomerátumok, valamint ezek optikai tulajdonságokra gyakorolt hatásának elméleti vizsgálata szilíciumkarbidban, 2002-2005; zárójelentés minősítése: kiváló
- MTA-DFG bilaterális project No. 112: Töltéshordozó csapdaállapotok kialakulási és passziválási mechanizmusai 4H-SiC termális oxidációja során, 2004-2007
- OTKA K67886: Ponthibák vizsgálata széles tiltott sávú anyagokban a standard sűrűségfunkcionál elméleteken túli módszerekkeli, 2007-2011; zárójelentés minősítése: kiváló
- MTA-DFG bilaterális projekt No. 436: Szilíciumdioxidba beágyazott félvezető nanokristályok vizsgálata, 2008-2010
- MTA Lendület program: Félvezető nanoszerkezetek tervezése és jellemzése biomarker, napelem és magnetométer alkalmazásokhoz, 2010-
- Distributed European Infrastructure for Supercomputing Application: The optical properties of group IV semiconductor nanocrystals - an ab initio many-body approach, 2010-2011
- FP7 No. 270197: DIAMANT-Diamond based atomic nanotechnologies, 2011-2014
- PRACE Distributed European Computing Initiative (DECI-7) project DIAVIB, 2011-2012
- OTKA K101819: Lumineszkáló szilíciumkarbid nanokristályok tervezése, előállítása és analízise in vivo biomarker alkalmazásokhoz, 2012-2016
- OTKA K106114: Újfajta 2-fotonos fotokémiai anyagok és szilíciumkarbid alapú nanomarkarek fejlesztése neuronhálózatok aktivitásának és a dendritikus jel integrációnak gyors, három dimenziós multi-foton mikroszkópiával történż mérésére
meghívott előadások:
- Designing luminescent in vivo biomarkers from ab initio calculations: prediction from theory and experiments, in California Nanosystems Institute, Santa Barbara (USA), April 8, 2013
- Characterization of color centres in diamond from first principles, QDiamond Workshop, Bonamanzi Lodge, South Africa, 2-8 December, 2012
- Optical excitation and electro-luminescence of single nitrogen-vacancy defect in diamond: theory in California Nanosystems Institute, Santa Barbara (USA), April 20, 2012
- Theory of point defects in SiC: from power industry to quantum bits in Van de Walle group seminar, University of California -- Santa Barbara (USA), April 18, 2012
- Ab initio study of silicon-vacancy defect in bulk and nano diamonds in Physics Seminar of Pontificia Universidad Catolica de Santiago, Santiago (Chile), December 7, 2011
- Trends in materials science: atomistic simulations in Autumn School of Roland Eötvös Physical Society, October 3-6, 2011
- Transition metal defects in cubic and hexagonal polytypes of SiC in International Conference of Silicon Carbide and Related Materials 2011, Cleveland (USA), September 10-16, 2011
- Optical excitations of nitrogen-vacancy center in diamond at Atominstitut Wien, Atomic Physics Seminar, June 3, 2011
- Optical excitations of nitrogen-vacancy center in diamond at UC Berkeley, Atomic and Molecular Physics Seminar, April 20, 2011
- Ab initio theory of nitrogen-vacancy defect in diamond at 476th Wilhelm and Else Heraeus Seminar - Diamond - spintronics, photonics, bio-applications, Physikzentrum Bad Honnef (Germany), April 4-7, 2011
- Quantum mechanical calculations on semiconductor structures: spintronics, biomarker and solar cell applications in Stuttgart University at Prof. J. Wrachtrup group, Stuttgart (Germany), November 23, 2010
- Theory of Nitrogen-Vacancy Center in Diamond in ITAMP Workshop of "Artificial atoms in diamond: from quantum physics to applications", Harvard-Smithsonian Center for Astrophysics, Institute of Atomic, Molecular and Optical Physics, Harvard University, Cambridge (USA),November 11-13, 2010
- Design and characterization of semiconductor nanostructures for biomarker, solar cell and magnetometer applications in Roland Eötvös Science University at Ortvay colloquium, Budapest (Hungary), October 7, 2010
- Defects in SiC: theory in European Conference of Silicon Carbid e and Related Materials 2010, Oslo (Norway), August 29 - September 2, 2010
- Theory of Defects in SiC in Light and Energy from Novel Semiconductors (LENS) Summer School, Oslo (Norway), August 27-29, 2010
- Dopants in Si nanowires in CECAM Workshop of "Dopants and Impurities in Semiconducting Nanowires", Lausanne (Switzerland), July 6-8, 2009
- Point Defects in SiC in Materials Research Society Spring Meeting, San Francisco (USA), March 24-28, 2008
- Simulation of atomic processes in semiconductors in UC Davis Condensed Matter Seminar, Davis (USA), June 7, 2007
- Point Defects and Their Aggregation in Silicon Carbide in European Conference of Silicon Carbide and Related Materials 2006, NewCastle (UK), September 4-9, 2006
- Antisites as possible origin of irradiation induced photoluminescence centers in 4H-SiC: A theoretical study on clusters of antisites and carbon interstitials in International Conference of Silicon Carbide and Related Materials 2003, Lyon (France), October 5-10, 2003
díjak:
- TDK I. helyezés a BME-n, 1993, Rektori Különdíjjal, 1995
- Köztársasági Ösztöndíj, 1995-1996
- Magyar Műszaki Haladásért Alapítvány ösztöndíja, 1994-1995 és 1995-1996
- Ferenczi György Alapítvány ifjúsági díja, 1996
- TEMPUS ösztöndíj, 1997
- Soros György Belföldi Doktorandusz Ösztöndíja, 1999-2000
- Akadémiai Ifjúsági Díj, 2001
- Bolyai János Kutatói Ösztöndíj, 2001-2004 (lemondva)
- Békésy György Posztdoktori ösztöndíj, 2001-2004
- Nemzetközi Gábor Dénes Díj, 2003
- Bolyai János Kutatói Ösztöndíj, 2004-2007
- Magyar Állami Eötvös Ösztöndíj, 2007
- Harvard Egyetem Posztdoktori Ösztöndíj, 2007
- MTA Talentum-díj, 2008
- MTA Bolyai-plakett, 2008
- Magyar Köztársasági Arany Érdemkereszt, 2008
- HAESF Ösztöndíj a Harvard Egyetemre, 2008
- Bolyai János Kutatói Ösztöndíj, 2009-2011
- MTA "Lendület program" nyertese, 2010-2014
- Vendégprofesszor a stuttgarti Max Planck Intézetben, 2011-
- Vendégprofesszor a svédországi Linköping Egyetemen, 2012-
közélet, tagság:
- MTA köztestületi tag, Gábor Dénes Klub tag, Sigma Xi Magyar Tagozat tag
- Eötvös Lóránd Fizikai Társulat tagja
- Materials Research Society (US) tag
- American Physical Society (US) tag
- European Conference on Silicon Carbide and Related Materials Steering Committee tag, European Conference on Silicon Carbide and Related Materials Program Committee tag
- International Conference on Silicon Carbide and Related Materials Program Committee tag
nyelvtudás: angol és német folyékonyan
Nemzetközi együttműködés:
- Prof. Thomas Frauenheim elméleti csoportja, most a Bremen Center for Computational Material Science (BCCMS) intézetben
- University of Pittsburgh, Prof. W. J. Choyke kísérleti csoportja
- University of Linköping, Prof. Erik Janzén kísérleti csoportja
- University of Tsukuba, Prof. Junichi Isoya kísérleti csoportja
- University of Witwatersrand (Johannesburg, South Africa), Dr. J. E. Lowther elméleti csoportja
- Harvard University (USA), Prof. Efthimios Kaxiras elméleti csoportja
- Harvard University (USA), Prof. Michael Lukin kísérleti csoportja
- University of Osnabrück, Prof. Michael Rohlfing elméleti csoportja
- University of California - Davis (USA), Prof. Zimányi Gergely és Giulia Galli elméleti csoportja
- University of Stuttgart, Prof. Jörg Wrachtrup kísérleti csoportja
- University of Ulm, Prof. Fedor Jelezko kísérleti csoportja
- Florida State University, Prof. Stratos Manousakis elméleti csoportja

Publikációs tevékenység

Five most important papers in last five years:

Gate-Controlled Donor Activation in Silicon Nanowires
Binghai Yan, Thomas Frauenheim, and Adam Gali
Nano Letters 10 3791-3795 (2010).
High Energy Excitations in Silicon Nanoparticles
Adam Gali, Márton Vörös, Dario Rocca, Gergely T. Zimanyi, and Giulia Galli
Nano Letters 9 3780-3785 (2009).
Theory of Spin-Conserving Excitation of the N-V- Center in Diamond
Adam Gali, Erik Janzén, Péter Deák, Georg Kresse and Efthimios Kaxiras
Physical Review Letters 103 186404 (2009).
Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors
Adam Gali, Maria Fyta and Efthimios Kaxiras
Phys. Rev. B 77 155206 (2008).
Strain-Free Polarization Superlattice in Silicon Carbide: A Theoretical Investigation
P. Deák, A. Buruzs, A. Gali, and Th. Frauenheim
Phys. Rev. Lett. 96 236803 (2006).

Other important papers:

Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC
T. Umeda, N. T. Son, J. Isoya, E. Janzén, T. Ohshima, N. Morishita, H. Itoh, A. Gali, and M. Bockstedte
Phys. Rev. Lett. 96 145501 (2006).
Divacancy in 4H-SiC
N. T. Son, P. Carlsson, J. ul Hassan, E. Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, and H. Itoh
Phys. Rev. Lett. 96 055501 (2006).
Correlation between the antisite pair and the D_I center in SiC
A. Gali, P. Deák, E. Rauls, N. T. Son, I. G. Ivanov, F. H. C. Carlsson, E. Janzén, and W. J. Choyke
Phys. Rev. B 67 155203 (2003).
Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC
B. Aradi, A. Gali, P. Deák, J. E. Lowther, N. T. Son, E. Janzén, and W. J. Choyke
Phys. Rev. B 63 245202 (2001) 19 pages.
Overcoordinated Hydrogens in the Carbon Vacancy --Donor Centers of SiC
A. Gali, B. Aradi, P. Deák, W. J. Choyke and N. T. Son,
Phys. Rev. Lett. 84 4926-4929 (2000).
The spin state of the neutral silicon vacancy in 3C-SiC
P. Deák, J. Miró, A. Gali, L. Udvardi and H. Overhof,
Appl. Phys. Lett. 75 2103-2105 (1999).

Book, chapters in a book:

Defects in SiC
E. Janzén, A. Gali, A. Henry, I. G. Ivanov, B. Magnusson, and N. T. Son
in Defects in Microelectronic Materials and Devices edited by Daniel M. Fleetwood, Sokrates T. Pantelides, and Ronald D. Schrimpf (Taylor and Francis/CRC press 2008)
Hydrogen in SiC (3rd Chapter)
P. Deák, A. Gali, and B. Aradi
in Recent Major Advances in SiC edited by W. J. Choyke, H. Matsunami, and G. Pensl (Springer-Verlag Berlin Heidelberg 2004)

Papers:

Ab initio characterization of a Ni-related defect in diamond: The W8 center
Thomas Chanier and Adam Gali
Physical Review B 87 245206 (2013).
Readout and control of a single nuclear spin with a meta-stable electron spin ancilla
Sang-Yun Lee, Matthias Widmann, Torsten Rendler, Marcus Doherty, Tom Babinec, Sen Yang, Moritz Eyer, Petr Siyushev, Birgit Haussmann, Marko Loncar, Zoltán Bodrog, Adam Gali, Neil Manson, Helmut Fedder, Jörg Wrachtrup
Nature Nanotechnology in print (2013). DOI: 10.1038/nnano.2013.104
Role of screening in the density functional applied to transition-metal defects in semiconductors
Viktor Ivády, I. A. Abrikosov, E. Janzén, and Adam Gali
Physical Review B 87 205201 (2013).
Optically Controlled Switching of the Charge State of a Single Nitrogen-Vacancy Center in Diamond at Cryogenic Temperatures
P. Siyushev, H. Pinto, M. Vörös, A. Gali, F. Jelezko, and J. Wrachtrup
Physical Review Letters 110 167402 (2013).
Increasing impact ionization rates in Si nanoparticles through surface engineering: A density functional study
Márton Vörös, Dario Rocca, Giulia Galli, Gergely T. Zimanyi, and Adam Gali
Physical Review B 87 155402 (2013).
High-Pressure Core Structures of Si Nanoparticles for Solar Energy Conversion
S. Wippermann, M. Vörös, D. Rocca, A. Gali, G. Zimanyi, and G. Galli
Physical Review Letters 110 046804 (2013).
Silicon carbide quantum dots for bioimaging
David Beke, Zsolt Szekrényes, Denes Pálfi, Gergely Róna, István Balogh, Pal Andor Maák, Gergely Katona, Zsolt Czigány, Katalin Kamarás, Balazs Rózsa, Laszlo Buday, Beáta Vértessy and Adam Gali
Journal of Materials Research 28 205-209 (2013).
Preparation of small silicon carbide quantum dots by wet chemical etching
David Beke, Zsolt Szekrényes, István Balogh, Zsolt Czigány, Katalin Kamarás and Adam Gali
Journal of Materials Research 28 44-49 (2013).
Enhancement of electron-nuclear hyperfine interaction at lattice defects in semiconducting single-walled carbon nanotubes studied by ab initio density functional theory calculations
V. Zólyomi, V. Ivádi and Adam Gali
Physical Review B 86 235433 (2012).
Near-infrared luminescent cubic silicon carbide nanocrystals for in vivo biomarker applications: an ab initio study
B. Somogyi, V. Zólyomi, and Adam Gali
Nanoscale 4 7720-7726 (2012).
Electronic and Optical Properties of Silicon Carbide Nanotubes and Nanoparticles Studied by Density Functional Theory Calculations: Effect of Doping and Environment
Márton Vörös and Adam Gali
Journal of Computational and Theoretical Nanoscience 9 1906-1940 (2012).
Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC
Nguyen Tien Son, Xuan Thang Trinh, Andreas Gällström, Stefano Leone, Olof Kordina, Erik Janzén, Krisztián Szász, Viktor Ivády, and Adam Gali
Journal of Applied Physics 112 083711 (2012).
Ab Initio Study of Phosphorus Donors Acting as Quantum Bits in Silicon Nanowires
Binghai Yan, Riccardo Rurali, and Ádám Gali
Nano Letters 12 3460-3465 (2012).
Tuning the Optical Gap of Nanometer-Size Diamond Cages by Sulfurization: A Time-Dependent Density Functional Study
Márton Vörös Tamás Demjén, Tibor Szilvási and Adam Gali
Physical Review Letters 108 267401 (2012).
Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC
Andreas Gällström, Björn Magnusson, Franziska C. Beyer, Adam Gali, N.T. Son, Stefano Leone, Ivan G. Ivanov, Carl G. Hemmingsson, Anne Henry, Erik Janzén
Physica B: Condensed Matter 407 1462-1466 (2012).
Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC
F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima, and G. Pensl
Applied Physics Letters 100 132107 (2012).
Electrically driven single photon source at room temperature in diamond
N. Mizuochi, T. Makino, H. Kato, D. Takeuchi, M. Ogura, H. Okushi, M. Nothaft, P. Neumann, A. Gali, F. Jelezko, J. Wrachtrup, and S. Yamasaki
Nature Photonics 6 299-303 (2012).
Identification of defects at the interface between 3C-SiC quantum dots and a SiO₂ embedding matrix
Márton Vörös, Adam Gali, Efthimios Kaxiras, Thomas Frauenheim, and Jan M. Knaup
physica status solidi b 249 360-367 (2012).
Invited Feature Article: Excitation spectrum of point defects in semiconductors studied by time-dependent density functional theory
Adam Gali
Journal of Materials Research 27 897-909 (2012). DOI: 10.1557/jmr.2011.431
Characterization of luminescent silicon carbide nanocrystals prepared by reactive bonding and subsequent wet chemical etching
David Beke, Zsolt Szekrényes, István Balogh, Miklós Veres, Éva Fazakas, Lajos K. Varga, Katalin Kamarás, Zsolt Czigány, and Adam Gali
Applied Physics Letters 99 213108 (2011).
Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study
Viktor Ivády, Andreas Gällström, Nguyen Tien Son, Erik Janzén, and Adam Gali
Physical Review Letters 107 195501 (2011).
Effect of symmetry breaking on the optical absorption of semiconductor nanoparticles
Adam Gali, Efthimios Kaxiras, Gergely T. Zimanyi, and Sheng Meng
Physical Review B 84 035325 (2011).
Defects at nitrogen site in electron-irradiated AlN
N.T. Son, A. Gali, Á. Szabó, M. Bickermann, T. Ohshima, J. Isoya, and E. Janzén
Applied Physics Letters 98 242116 (2011).
Feature Article: Time-dependent density functional study on the excitation spectrum of point defects in semiconductors
Adam Gali
physica status solidi b 248 1337-1346 (2011).
Feature Article: Accurate gap levels and their role in the reliability of other calculated defect properties
Peter Deák, Adam Gali, Bálint Aradi, and Thomas Frauenheim
physica status solidi b 248 790-798 (2011).
Dark States of Single Nitrogen-Vacancy Centers in Diamond Unraveled by Single Shot NMR
G. Waldherr, J. Beck, M. Steiner, P. Neumann, A. Gali, Th. Frauenheim, F. Jelezko, and J. Wrachtrup
Physical Review Letters 106 157601 (2011).
Properties of nitrogen-vacancy centers in diamond: the group theoretic approach
J R Maze, A Gali, E Togan, Y Chu, A Trifonov, E Kaxiras, and M D Lukin
New Journal of Physics 13 025025 (2011).
An ab initio study of local vibration modes of the nitrogen-vacancy center in diamond
Adam Gali, Tamás Simon, and John Edward Lowther
New Journal of Physics 13 025016 (2011).
¹³C hyperfine interactions in the nitrogen-vacancy centre in diamond
Benjamin Smeltzer, Lilian Childress and Adam Gali
New Journal of Physics 13 025021 (2011).
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Martin Heiss, Sonia Conesa-Boj, Jun Ren, Hsiang-Han Tseng, Adam Gali, Andreas Rudolph, Emanuele Uccelli, Francesca Peiró, Joan Ramon Morante, Dieter Schuh, Elisabeth Reiger, Efthimios Kaxiras, Jordi Arbiol, and Anna Fontcuberta i Morral
Physical Review B 83 045303 (2011).
EPR and ab initio calculation study on the EI4 center in 4H- and 6H-SiC
P. Carlsson, N. T. Son, A. Gali, J. Isoya, N. Morishita, T. Ohshima, B. Magnusson, and E. Janzén
Physical Review B 82 235203 (2010).
Gate-Controlled Donor Activation in Silicon Nanowires
Binghai Yan, Thomas Frauenheim, and Adam Gali
Nano Letters 10 3791-3795 (2010).
The absorption of oxygenated silicon carbide nanoparticles
Márton Vörös, Péter Deák, Thomas Frauenheim, and Adam Gali
The Journal of Chemical Physics 133 064705 (2010).
Group-II acceptors in wurtzite AlN: A screened hybrid density functional study
Áron Szabó, Nguyen Tien Son, Erik Janzén, and Adam Gali
Applied Physics Letters 96 192110 (2010).
Accurate defect levels obtained from the HSE06 range-separated hybrid functional
Peter Deák, Bálint Aradi, Thomas Frauenheim, Erik Janzén, and Adam Gali
Physical Review B 81 153203 (2010).
The absorption spectrum of hydrogenated silicon carbide nanocrystals from ab initio calculations
Márton Vörös, Peter Deák, Thomas Frauenheim, and Adam Gali
Applied Physics Letters 96 051909 (2010).
Excited states of the negatively charged nitrogen-vacancy color center in diamond
Yuchen Ma, Michael Rohlfing, and Adam Gali
Physical Review B 81 041204(R) (2010).
Identification of individual ¹³C isotopes of nitrogen-vacancy center in diamond by combining the polarization studies of nuclear spins and first-principles calculations
Adam Gali
Physical Review B 80 241204(R) (2009).
High Energy Excitations in Silicon Nanoparticles
Adam Gali, Márton Vörös, Dario Rocca, Gergely T. Zimanyi, and Giulia Galli
Nano Letters 9 3780-3785 (2009).
Theory of Spin-Conserving Excitation of the N-V- Center in Diamond
Adam Gali, Erik Janzén, Péter Deák, Georg Kresse and Efthimios Kaxiras
Physical Review Letters 103 186404 (2009).
Optical absorption of diamond nanocrystals from ab initio density-functional calculations
Márton Vörös and Adam Gali
Physical Review B 80 161411(R) (2009).
Identification of a Frenkel-pair defect in electron-irradiated 3C SiC
N. T. Son, E. Janzén, J. Isoya, N. Morishita, H. Hanaya, H. Takizawa, T. Ohshima, and A. Gali
Physical Review B 80 125201 (2009).
Effect of oxygen on single-wall silicon carbide nanotubes studied by first-principles calculations
Á. Szabó and A. Gali
Physical Review B 80 075425 (2009).
Theory of the neutral nitrogen-vacancy center in diamond and its application to the realization of a qubit
Adam Gali
Physical Review B 79 235210 (2009).
Comment on "Ab Initio Electronic and Optical Properties of the (N-V)^- Center in Diamond"
Adam Gali and Efthimios Kaxiras
Physical Review Letters 102 149703 (2009).
Dicarbon antisite defect in n-type 4H-SiC
T. Umeda, J. Isoya, N. Morishita, T. Ohshima, E. Janzén, and A. Gali
Physical Review B 79 115211 (2009).
Donor levels in Si nanowires determined by hybrid-functional calculations
Riccardo Rurali, Bálint Aradi, Thomas Frauenheim, and Ádám Gali
Physical Review B 79 115303 (2009).
Challenges for ab initio defect modeling
Peter Deák, Bálint Aradi, Thomas Frauenheim, and Adam Gali
Materials Science and Engineering B 154-155 187-192 (2008).
Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches
Michel Bockstedte, Adam Gali, Alexander Mattausch, Oleg Pankratov, and John W. Steeds
physica status solidi (b) 245 1281 (2008).
Intershell interaction in double walled carbon nanotubes: Charge transfer and orbital mixing
V. Zólyomi, J. Koltai, Á. Rusznyák, J. Kürti, A. Gali, F. Simon, H. Kuzmany, Á. Szabados, and P. R. Surján
Phys. Rev. B 77 245403 (2008).
Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors
Adam Gali, Maria Fyta and Efthimios Kaxiras
Phys. Rev. B 77 155206 (2008).
Theoretical study of small silicon clusters in 4H-SiC
T. Hornos, N. T. Son, E. Janzén, and A. Gali
Phys. Rev. B 76 165209 (2007).
The mechanism of defect creation and passivation at the SiC/SiO₂ interface
Peter Deák, Jan M Knaup, Tamás Hornos, Christoph Thill, Adam Gali and Thomas Frauenheim
J. Phys. D 40 6242-6253 (2007).
Accurate single-particle determination of the band gap in silicon nanowires
R. Rurali, B. Aradi, Th. Frauenheim, and A. Gali
Phys. Rev. B 76 113303 (2007).
Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC
T. Umeda, J. Ishoya, T. Ohshima, N. Morishita, H. Itoh, and A. Gali
Phys. Rev. B 75 245202 (2007).
Limits of the scaled shift correction to levels of interstitial defects in semiconductors
P. Deák, Th. Frauenheim, and A. Gali
Phys. Rev. B 75 153204 (2007).
Ab initio theoretical study of hydrogen and its interaction with boron acceptors and nitrogen donors in single-wall silicon carbide nanotubes
A. Gali
Phys. Rev. B 75 085416 (2007).
Ab initio supercell calculations on aluminum-related defects in SiC
A. Gali, T. Hornos, N. T. Son, E. Janzén, and W. J. Choyke
Phys. Rev. B 75 045211 (2007).
Semiconductor-to-metal transition of double walled carbon nanotubes induced by inter-shell interaction
V. Zólyomi, Á. Rusznyák, J. Kürti, Á. Gali, F. Simon, H. Kuzmany, Á. Szabados, and P. R. Surján
Phys. Stat. Sol. (b) 243 3476 (2006).
Ab initio study of nitrogen and boron substitutional impurities in single-wall SiC nanotubes
A. Gali
Phys. Rev. B 73 245415 (2006).
Strain-Free Polarization Superlattice in Silicon Carbide: A Theoretical Investigation
P. Deák, A. Buruzs, A. Gali, and Th. Frauenheim
Phys. Rev. Lett. 96 236803 (2006).
Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC
T. Umeda, N. T. Son, J. Isoya, E. Janzén, T. Ohshima, N. Morishita, H. Itoh, A. Gali, and M. Bockstedte
Phys. Rev. Lett. 96 145501 (2006).
Electrical characterization of metastable carbon clusters in SiC: A theoretical study
A. Gali, N. T. Son, and E. Janzén
Phys. Rev. B 73 033204 (2006).
Divacancy in 4H-SiC
N. T. Son, P. Carlsson, J. ul Hassan, E. Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, and H. Itoh
Phys. Rev. Lett. 96 055501 (2006).
Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC
N. T. Son, A. Henry, J. Isoya, M. Katagiri, T. Umeda, A. Gali, and E. Janzén
Phys. Rev. B 73 075201 (2006).
Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study
T. Hornos, A. Gali, R. P. Devaty, and W. J. Choyke
Appl. Phys. Lett. 87 212114 (2005).
Defects in SiO₂ as the possible origin of near interface traps in the SiC/SiO₂ system: A systematic theoretical study
J. M. Knaup, P. Deák, Th. Frauenheim, A. Gali, Z. Hajnal, and W. J. Choyke
Phys. Rev. B 72 115323 (2005).
Theoretical study of the mechanism of dry oxidation of 4H-SiC
J. M. Knaup, P. Deák, Th. Frauenheim, A. Gali, Z. Hajnal, and W. J. Choyke
Phys. Rev. B 71 235321 (2005).
EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC
T. Umeda, Y. Ishitsuka, J. Isoya, N. T. Son, E. Janzén, N. Morishita, T. Ohshima, H. Itoh, and A. Gali
Phys. Rev. B 71 193202 (2005).
Electronic structures of boron-interstitial clusters in silicon
P. Deák, A. Gali, A. Sólyom, A. Buruzs, and Th. Frauenheim
Journal of Physics: Cond. Matter 17 S2141-S2153 (2005).
Activation of shallow boron acceptor in C/B coimplanted silicon carbide: A theoretical study
A. Gali, T. Hornos, P. Deák, N. T. Son, E. Janzén, and W. J. Choyke
Appl. Phys. Lett. 86 102108 (2005).
Possibility for the electrical activation of the carbon antisite by hydrogen in SiC
A. Gali, P. Deák, N. T. Son, and E. Janzén
Phys. Rev. B 71 035213 (2005).
EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC
T. Umeda, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, A. Gali, P. Deák, N. T. Son, and E. Janzén
Phys. Rev. B 70 235212 (2004).
Diffusion of hydrogen in perfect, p-type doped, and radiation-damaged 4H-SiC
A. Aradi, P. Deák, A. Gali, N. T. Son, and E. Janzén
Phys. Rev. B 69 233202 (2004).
Defects of the SiC/SiO₂ interface: energetics of the elementary steps of the oxidation reaction
P. Deák, A. Gali, J. Knaup, Z. Hajnal, Th. Frauenheim, P. Ordejón, and W. J. Choyke
Physica B 340-342 1069-1073 (2003).
Anti-site pair in SiC: a model of the D_I center
A. Gali, P. Deák, E. Rauls, N. T. Son, I. G. Ivanov, F. H. C. Carlsson, E. Janzén, and W. J. Choyke
Physica B 340-342 175-179 (2003).
Theoretical study of vacancy diffusion and vacancy-assisted clustering of antisites in SiC
E. Rauls, Th. Frauenheim, A. Gali, and P. Deák
Phys. Rev. B 68 155208 (2003).
Aggregation of carbon interstitials in silicon carbide: A theoretical study
A. Gali, P. Deák, P. Ordejón, N. T. Son, E. Janzén, and W. J. Choyke
Phys. Rev. B 68 125201 (2003).
Hydrogen passivation of nitrogen in SiC
A. Gali, P. Deák, N. T. Son, and E. Janzén
Appl. Phys. Lett. 83 1385-1387 (2003).
Physics and chemistry of hydrogen in the vacancies of semiconductors
B. Szűcs, A. Gali, Z. Hajnal, P. Deák, and Chris G. Van de Walle
Phys. Rev. B 68 085202 (2003).
Studies of boron - interstitial clusters (BIC) in Si
P. Deák, A. Gali, A. Sólyom, P. Ordejón, K. Kamarás, and G. Battistig
Journal of Physics: Cond. Matter 15 4967-4977 (2003).
Correlation between the antisite pair and the D_I center in SiC
A. Gali, P. Deák, E. Rauls, N. T. Son, I. G. Ivanov, F. H. C. Carlsson, E. Janzén, and W. J. Choyke
Phys. Rev. B 67 155203 (2003).
"Some like it shallower" - p-type doping in SiC
P. Deák, B. Aradi, A. Gali and U. Gerstmann
phys. stat. sol. (b) 235 139-145 (2003).
Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study
A. Gali, D. Heringer, P. Deák, Z. Hajnal, Th. Frauenheim, R. P. Devaty, and W. J. Choyke
Phys. Rev. B 66 125208 (2002).
Anharmonicity of the C-H stretch mode in SiC: Unambiguous identification of hydrogen-silicon vacancy defect
A. Gali, B. Aradi, D. Heringer, W. J. Choyke, R. P. Devaty, and S. Bai
Appl. Phys. Lett. 80 237-239 (2002).
Passivation of p-type dopants in 4H-SiC by hydrogen
B. Aradi, A. Gali, P. Deák, N. T. Son and E. Janzén
Physica B 308-310 722-725 (2001).
Defect states of substitutional oxygen in diamond
A. Gali, J. E. Lowther, and P. Deák
J. Phys.: Condens. Matter 13 11607-11613 (2001).
Boron and aluminium doping in SiC and its passivation by hydrogen
Peter Deák, Bálint Aradi and Adam Gali
J. Phys.: Condens. Matter 13 9019-9026 (2001).
Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC
B. Aradi, A. Gali, P. Deák, J. E. Lowther, N. T. Son, E. Janzén, and W. J. Choyke
Phys. Rev. B 63 245202 (2001) 19 pages.
Overcoordinated Hydrogens in the Carbon Vacancy --Donor Centers of SiC
A. Gali, B. Aradi, P. Deák, W. J. Choyke and N. T. Son,
Phys. Rev. Lett. 84 4926-4929 (2000).
Phosphorus-related deep donor in SiC
A. Gali, P. Deák, P. R. Briddon, R. P. Devaty and W. J. Choyke,
Phys. Rev. B 61 12602-12604 (2000).
The spin state of the neutral silicon vacancy in 3C-SiC
P. Deák, J. Miró, A. Gali, L. Udvardi and H. Overhof,
Appl. Phys. Lett. 75 2103-2105 (1999).
Boron-vacancy complex in SiC
A. Gali, P. Deák, R. P. Devaty and W. J. Choyke,
Phys. Rev. B 60 10620-10623(1999).
The Role of Oxygen Vacancy States in the n-type Conduction of ß-GaO
Z. Hajnal, J. Miró, A. Gali, P. Deák,
Phys. Stat. Sol. Rap. Res. Note, 99 -001 (1999).
Theoretical studies on nitrogen-oxygen complexes in silicon
A. Gali, J. Miró, P. Deák, C. P. Ewels and R. Jones,
J. Phys.: Condens. Matter 8 7711-7722 (1996).
Calculation of Migration Barriers on Hydrogenated Diamond Surfaces
A. Gali, A. Mészáros and P. Deák,
Diamond & Rel. Mater. 5 613-616 (1996).
Modelling of stress induced diamond nucleation
P. Deák, A. Gali, S. Sczigel and H. Ehrhardt,
Diamond & Rel. Mater. 5 706-709 (1995).

Proceedings:

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC
Ivan G. Ivanov, Andreas Göllström, Stefano Leone, Olof Kordina, N.T. Son, Anne Henry, Viktor Ivády, Adam Gali, and Erik Janzén
Mater. Sci. Forum 740-742 405-408 (2013).
Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study
Bálint Somogyi, Viktor Zólyomi and Adam Gali
Mater. Sci. Forum 740-742 641-644 (2013).
Excitation Properties of Silicon Vacancy in Silicon Carbide
Adam Gali
Mater. Sci. Forum 717-720 255-258 (2012).
Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from ab initio Calculations
V. Ivády, B. Somogyi, V. Zólyomi, A. Gällström, N.T. Son, E. Janzén, and A. Gali
Mater. Sci. Forum 717-720 205-210 (2012).
Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
A. Gällström, B. Magnusson, F.C. Beyer, A. Gali, N.T. Son, S. Leone, I.G. Ivanov, A. Henry, C.G. Hemmingsson, and E. Janzén
Mater. Sci. Forum 717-720 211-216 (2012).
Identification of Niobium in 4H-SiC by EPR and ab initio Studies
N.T. Son, V. Ivády, A. Gali, A. Gällström, S. Leone, O. Kordina, and E. Janzén
Mater. Sci. Forum 717-720 217-220 (2012).
Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC
R.P. Devaty, Fei Yan, W.J. Choyke, A. Gali, T. Kimoto, and T. Ohshima
Mater. Sci. Forum 717-720 263-266 (2012).
The Absorption of Diamondoids from Time-dependent Density Functional Calculations
Márton Vörös, Tamás Demjén, and Adam Gali
MRS Proceedings 1370 mrss11-1370-yy02-07 (2011).
Group theoretical analysis of nitrogen-vacancy center's energy levels and selection rules
J R Maze, A Gali, E Togan, Y Chu, A Trifonov, E Kaxiras, and M D Lukin
MRS Proceedings 1282 mrsf10-1282-a07-03 (2011).
Influence of Oxygen on the Absorption of Silicon Carbide Nanoparticles
M. Vörös, Peter Deák, Th. Frauenheim, and A. Gali
Mater. Sci. Forum 679-680 520-523 (2011).
Time-Dependent Density Functional Calculations on Hydrogenated Silicon Carbide Nanocrystals
M. Vörös, Peter Deák, Th. Frauenheim, and A. Gali
Mater. Sci. Forum 679-680 516-519 (2011).
Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional
T. Hornos,A. Gali, and B.G. Svensson
Mater. Sci. Forum 679-680 261-264 (2011).
Defects in SiC: theory
A. Gali
Mater. Sci. Forum 679-680 225-232 (2011).
Annealing simulations to determine the matrix interface structure of SiC quantum dots embedded in SiO₂
Jan M. Knaup, Márton Vörös, Peter Deák, Adam Gali, Thomas Frauenheim, and Efthimios Kaxiras
physica status solidi (c) 7 407-410 (2010).
Theory of neutral divacancy in SiC: a defect for spintronics
A. Gali, A. Gällström, N. T. Son, and E. Janzén
Mater. Sci. Forum 645-648 395-397 (2010).
New lines and issues associated with deep defect spectra in electron, proton and ⁴He ion irradiated 4H SiC
F. Yan, R.P. Devaty, W.J. Choyke, T. Kimoto, T. Ohshima, G. Pensland A. Gali
Mater. Sci. Forum 645-648 411-414 (2010).
The silicon vacancy in SiC
Janzén Erik, Gali Adam, Carlsson Patrick, Gällström Andreas, Magnusson Björn, Son N T
Physica B 404 4354-4358 (2009).
The Silicon Vacancy in SiC
E. Janzén, A. Gali, P. Carlsson, A. Gällström, B. Magnusson, N. T. Son
Mater. Sci. Forum 615-617 347-352 (2009).
Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC
A. Gali, T. Umeda, E. Janzén, N. Morishita, T. Ohshima, J. Isoya
Mater. Sci. Forum 615-617 361-364 (2009).
Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
N. T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, A. Gali, Erik Janzén
Mater. Sci. Forum 615-617 377-380 (2009).
New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
A. Gali, T. Hornos, N. T. Son, Erik Janzén
Mater. Sci. Forum 600-603 413-416 (2009).
Defects Identified in SiC and Their Implications
M. Bockstedte, A. Marini, A. Gali, Oleg Pankratov, A. Rubio
Mater. Sci. Forum 600-603 285-290 (2009).
Ádám Gali, Michel Bockstedte, Ngyen Tien Son, Erik Janzén: Point Defects in SiC
in Silicon Carbide 2008 - Materials, Processing and Devices, edited by M. Dudley, C.M. Johnson, A. Powell, S.-H. Ryu
(Mater. Res. Soc. Symp. Proc. Volume 1069, Warrendale, PA, 2008), 1069-D03-01
The Mechanism of Interface State Passivation by NO
P. Deák, T. Hornos, Ch. Thill, J. Knaup, A. Gali, and Th. Frauenheim
Mater. Sci. Forum 556-557 541-544 (2007).
A Theoretical Study on Aluminum-related Defects in SiC
T. Hornos, A. Gali, N. T. Son, and E. Janzén
Mater. Sci. Forum 556-557 445-448 (2007).
Point Defects and their Aggregation in Silicon Carbide
A. Gali, T. Hornos, M. Bockstedte and Th. Frauenheim
Mater. Sci. Forum 556-557 439-444 (2007).
Identification of divacancies in 4H-SiC
N.T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, and E. Janzén
Physica B: Condensed Matter 376-377 334-337 (2006).
Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC
J. Isoya, M. Katagiri, T. Umeda, S. Koizumi, H. Kanda, N. T. Son, A. Henry, A. Gali, and E. Janzén
Physica B: Condensed Matter 376-377 358-361 (2006).
Silicon Carbide: A Playground for 1D-Modulation Electronics
P. Deák, A. Buruzs, A. Gali, Th. Frauenheim, and W.J. Choyke
Mater. Sci. Forum 527-529 355-358 (2006).
Divacancy and its Identification: Theory
A. Gali, M. Bockstedte, N.T. Son, T. Umeda, J. Isoya and E. Janzén
Mater. Sci. Forum 527-529 523-526 (2006).
Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
N.T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh and E. Janzén
Mater. Sci. Forum 527-529 527-530 (2006).
Signature of the Negative Carbon Vacancy-Antisite Complex
M. Bockstedte, A. Gali, T. Umeda, N.T. Son, J. Isoya and E. Janzén
Mater. Sci. Forum 527-529 539-542 (2006).
Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
F. Yan, R.P. Devaty, W.J. Choyke, A. Gali, I.B. Bhat and D.J. Larkin
Mater. Sci. Forum 527-529 585-588 (2006).
Shallow P Donors in 3C-, 4H- and 6H-SiC
J. Isoya, M. Katagiri, T. Umeda, N.T. Son, A. Henry, A. Gali, N. Morishita, T. Ohshima, H. Itoh and E. Janzén
Mater. Sci. Forum 527-529 593-596 (2006).
A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers
T. Hornos, A. Gali, R.P. Devaty and W.J. Choyke
Mater. Sci. Forum 527-529 605-608 (2006).
Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
F. Yan, R.P. Devaty, W.J. Choyke, A. Gali, F. Schmid, G. Pensl, G. Wagner
Mater. Sci. Forum 483-485 493-496 (2005).
Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
A. Gali, T. Hornos, P. Deák, N.T. Son, E. Janzén, and W.J. Choyke
Mater. Sci. Forum 483-485 519-522 (2005).
The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO₂ Defects
J.M. Knaup, P. Deák, A. Gali, Z. Hajnal, Th. Frauenheim, and W.J. Choyke
Mater. Sci. Forum 483-485 569-572 (2005).
Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
A. Gali, P. Deák, E. Rauls, P. Ordejón, F.H.C. Carlsson, I. Ivanov, N.T. Son, E. Janzén, and W.J. Choyke
Mater. Sci. Forum 457-460 443-448 (2004).
The true nature of the shallow boron acceptor in SiC - localization vs. effective mass theory
U. Gerstmann, A. Gali, P. Deák, H. Overhof, and Th. Frauenheim
Mater. Sci. Forum 457-460 711-714 (2004).
Theoretical Study of Antisite Aggregation in α-SiC
E. Rauls, A. Gali, P. Deák, and Th. Frauenheim
Mater. Sci. Forum 433-436 491-494 (2003).
Calculation of Hyperfine Constants of Defects in 4H-SiC
A. Gali, P. Deák, N.T. Son, E. Janzén, H.J. von Bardeleben, and Jean-Louis Monge
Mater. Sci. Forum 433-436 511-514 (2003).
A Shallow Acceptor Complex in 4H-SiC: Al_SiN_CAl_Si
P. Deák, B. Aradi, A. Gali, U. Gerstmann, and W.J. Choyke
Mater. Sci. Forum 433-436 523-526 (2003).
A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC
P. Deák, A. Gali, Z. Hajnal, Th. Frauenheim, N.T. Son, E. Janzén, W.J. Choyke, and P. Ordejón
Mater. Sci. Forum 433-436 535-538 (2003).
Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
B. Aradi, A. Gali, P. Deák, N.T. Son and E. Janzén
Mater. Sci. Forum 389-393 561-564 (2002).
Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
W.J. Choyke, R.P. Devaty, S. Bai, A. Gali, Peter Deák and G. Pensl
Mater. Sci. Forum 389-393 585-589 (2002).
Theoretical Investigation of an Intrinsic Defect in SiC
A. Gali, P. Deák, N.T. Son and E. Janzén
Mater. Sci. Forum 389-393 477-480 (2002).
Electrical activity of oxygen defects in SiC
A. Gali, D. Heringer, P. Deák, Z. Hajnal, Th. Frauenheim and W. J. Choyke
Mater. Sci. Forum 353-356 463-466 (2001).
Theory of hydrogen-related defects in SiC
P. Deák, A. Gali, and B. Aradi
Mater. Sci. Forum 353-356 421-426 (2001).
Boron centers in 4H-SiC
B. Aradi, A. Gali, P. Deák, E. Rauls, Th. Frauenheim and N. T. Son
Mater. Sci. Forum 353-356 455-458 (2001).
Intrinsic defect complexes in α-SiC: the formation of anti-site pairs
E. Rauls, Z. Hajnal, A. Gali, P. Deák, and Th. Frauenheim
Mater. Sci. Forum 353-356 435-438 (2001).
Dopant-related complexes in SiC
A. Gali, J. Miró, P. Deák, R. P. Devaty and W. J. Choyke
Mater. Sci. Forum 338-342 795-798 (2000).
Vacancies and their complexes with hydrogen in SiC
P. Deák, B. Aradi, A. Gali, W. J. Choyke, N. T. Son, and E. Janzén
Mater. Sci. Forum 338-342 817-820 (2000).
Theoretical Studies on N,O and Other Defects in SiC
P. Deák, A. Gali, J. Miró, R. Guiterrez, A. Sieck and Th. Frauenheim,
Mater. Sci. Forum, 264-268 279-282 (1998).
Theoretical Studies on Defects in SiC
P. Deák, A. Gali, J. Miró, R. Guiterrez, A. Sieck and Th. Frauenheim,
Mater. Sci. Forum, 258-263 739-744 (1997).
Shallow N-O donors in Silicon
A. Gali, J. Miró and P. Deák,
in Early Stages of Oxygen Precipitation in Silicon , ed. R. Jones [Kluwer Acad. Publ., Dordrecht], NATO ASI series 17, 419-425 (1996).